Bulk cultivatable sublimation apparatus
Best records grower
Precise pressure control from 1 torr
For mass production of SiC bulk
S278 / S380
Description
This apparatus heat to sublimate raw material in vacuum or in an inert gas, then precipitate it to the seed crystal so that grow SiC bulk single crystal.
Feature
- Water-cooled double quartz tube to withstand the ultra-high-temperature specifications
- Precise pressure control in a wide range of range of up to atmospheric pressure from 1 torr
- It can be used at up to 2700 ℃
- It can be fully automatic controlled by a computer
- You can trace amount of pressure control in a wide range of range of up to atmospheric pressure from 1torr
- High vacuum specification available
Application
SiC, AlN
(This is SiC single crystal）
Specification
| Growing method | Sublimation method |
|---|---|
| Target crystal | 2～8 inch, SiC single crystal |
| Heating method | High frequency induction heating system |
| Heating temperature | Max. 2500℃ |
| Pressure control | 10～100±1 torr |
| Chamber | Water-cooled double quartz tube |
| Atmosphere | Ar・N2 |
| Exhaust system | Rotary pump, a turbo molecular pump |
| Crystal growth |
