Ultra-high-quality large ingot growth system
New technique
(NOC、NOn-contact Crucible)
to grow High-Quality and Large Si crystal
Development system
Description
This new system incorporates the benefits of cast growth method, the Czochralski(CZ) method, Kyropoulos methodto have a function for the growth of the high-quality silicon crystal. The low-temperature region is formed in the silicon melt upper, growing ingot by pulling up the silicon crystal continuously using a seed crystal.
※ This document was allowed to be diverted from JST FUTURE-PV Innovation project material.
Feature
- Furnace structure reduces the particles of carbon hot zone
- Energy saving structure reduces running cost
- Could be operated from a separate room by remote control function
- Easy seeding mechanism
Specification
| Crystal size | Max. φ500×H400（mm） |
|---|---|
| Crystal weight | Max. 100kg |
| Heating method | Resistance heating method with 2 zone carbon heater |
| Heating temperature |
Max. 1600℃、operationg temp. 1550℃ |
| Atmosphere | Atmospheric pressure with an inert gas or reduced-pressure atmosphere |
| Take-out of chamber | Lower part take-out mechanism by elevating the chamber bottom |
| Crystal growth |
